半導体装置

Semiconductor device

Abstract

【課題】引け巣の発生を低下させることができ、良好な放熱特性及び生産性を有する電力半導体装置を提供する。 【解決手段】板状で第1主面3a及び第2主面3bに導体パターン2を有し第1主面の導体パターンに電力半導体素子1を接合した基板4と、第3主面5a及び第4主面5bを有するヒートスプレッダ5とを備え、上記基板と上記ヒートスプレッダとを対向させてはんだ6にて接合した電力半導体装置において、はんだの接合部外周に沿って交互に配置される、はんだの不濡れ部111と濡れ部とをさらに備え、はんだの表面張力を制御する。 【選択図】図1
PROBLEM TO BE SOLVED: To provide a power semiconductor device which suppresses the occurrence of shrinkage cavities and achieves good heat radiation performance and high productivity.SOLUTION: A semiconductor device includes: a substrate 4 having a plate shape, having conductor patterns 2 on a first main surface 3a and a second main surface 3b, the substrate 4 where power semiconductor elements 1 are joined to the conductor pattern on the first main surface; and a heat spreader 5 including a third main surface 5a and a fourth main surface 5b. The substrate and the heat spreader are joined by solder 6 so as to face each other. The power semiconductor device includes solder non-wet parts 111 and wet parts, which are alternately arranged along an outer periphery of a solder joint part, thereby controlling surface tension of the solder.

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Cited By (1)

    Publication numberPublication dateAssigneeTitle
    JP-2016048760-AApril 07, 2016三菱電機株式会社, Mitsubishi Electric Corp半導体装置